Interdiffusion and reactions in Pd-Si heteropairs

For Pd-n+-Si contacts we investigated interactions between phases that appear during Pd film sputtering at a temperature T=300/spl deg/C and after heat annealing for 10, 20 and 30 min. at the above temperature. It is shown that palladium silicide Pd/sub 2/Si that is produced during the Pd film deposition forms a heat-resistant ohmic contact. The I-V curves were measured before and after rapid (for 60 s) thermal annealing at T=400 and 600/spl deg/C in the hydrogen atmosphere. They are in good agreement with the calculated ones. The results obtained evidence that Pd-n+-Si contacts remain stable up to T=600/spl deg/C.