Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

This paper presents the models for several components needed for GaN IC design. MIT virtual source GaNFET (MVSG) model works very well in modelling the high-voltage p-GaN gate power HEMTs and low-voltage GaN logic transistors. The 2DEG resistor can be modelled either using MVSG model or empirical spice model. Low ohmic resistance can be simply modelled with empirical equation. Circuit simulations and measurements demonstrate the convergence and accuracy of the models.