Pd/Porous GaAs in the Manufacture of Schottky Diodes

GaAs: Sn - GaAs: Si samples with a porous layer formed on their surfaces have been explored. It has been identified that an increase in the anodizing current density leads to an increase in the uneven structure of the porous layer, and when the current density is greater than 60 mA / cm 2, clusters are formed as a result of fragmentary separation of the porous layer from the substrate. The spectra analysis has proved that PL intensity increases with porosity growth. To identify the influence of the porous layer morphology on the Schottky contact parameters, the I-V characteristics of the structures have been explored. It has been discovered that with layer porosity increasing, the difference in characteristics between the structure without porous GaAs and structures with porous GaAs increases, that results in direct current decreasing and reverse current increasing. This can be explained by the decrease in the GaAs porous layer, and, as a consequence, by the decrease in the charge carriers density. The height of the Schottky barrier for Pd / porous GaAs with different morphology of the porous layer was calculated. It has been found out that the height of the Schottky barrier increases from 0.65 to 0.73 eV with a porous layer thickness. It has been established that the increase in the porous layer thickness leads to the rise of the ideality factor, which grows from 1.24 to 1.7 with the layer height and results in a deterioration of Schottky contact parameters.