A Performance Analysis of Schottky Diode to support RF Energy Harvesting

Given the low density of the surrounding RF powers, the rectifying stage is the one on which the designers of the rectenna (rectifying antenna) carry the most attention. Rectifier circuits must be of high efficiency to have usable DC output powers. Since the conversion efficiency is directly related to the electrical parameters of the used rectifying diode, this paper proposes a comparative study of the RF/DC conversion efficiency of an RF rectifier for the commonly considered Schottky diodes. In addition to the electrical parameters of the used diode, the operating frequency, as well as the desired level of DC output voltage, are considered in the comparison. Five diodes manufactured by AVAGO (HSMS 2820, HSMS 2850, HSMS 2860) and two Skyworks diodes (SMS 7621 and SMS 7630) are treated in this paper. This study will then provide designers with useful information in the selection of the rectifier diode and associated design parameters.