Modelling of anisotropic conductivity in strained n-silicon

The results of two-dimensional modelling of the anisotropic conductivity, which arises under monoaxial strain of electronic silicon, are indicated. It is shown, that using the nine-point template of digitization allows to take into account the modifications of a y-component of field strength, both in y-, and x-directions. As an example, the dependence of the output voltage of transversal sensors on axial mechanical stress, is presented.