GaN- based Planar Heterostructure Diodes for High Frequency Generation

Planar GaN-based diodes are studied as possible high frequency devices. The diodes represent heterostructure with GaN-based active layer on AlGaN-based substrate. Two types of diodes with different length (0.64 μm and 1.28 μm) are considered. The 2-D model of electron transport in the device is applied. The analysis of the diodes' operation has been performed using Ensemble Monte Carlo technique. Short channel effects are analyzed. Energy characteristics of the diodes are investigated depending on active region's doping. The results demonstrate high frequency generation up to 200 GHz with generation efficiency up to 5%.