A Comprehensive Physical Model for PNP based ESD Protection Devices in SOI technology

This paper presents a comprehensive physical model for PNP based ESD protection device. The model includes all major physical effects of device during ESD operation, which enables the model to capture the DC, AC and dynamic effects like overshoot, reverse recovery and self-heating. The simulation results have been verified using DC, TLP, vf-TLP and HBM measurements. This model gives good agreement between simulation and measurement in DC, AC and transient conditions. Due to its highly physical nature, the scalability of the model is also ensured.