A Quasi-Ballistic Drain current model with Positional Scattering Dependency applicable for Nanoscale DG MOSFETs

This work presents a simple physics based quasi-ballistic drain current model applicable for nanoscale Double Gate (DG) MOSFETs. The proposed model is physical and includes both drift-diffusion and ballistic transport phenomena. The model considers scattering effects that occur in real nanoscale devices, in terms of transmission and reflection co-efficients related to scattering theory. The results obtained in the proposed work provide an intuitive analysis and signify the positional scattering dependency at the critical layer near the low field source region on the drain current characteristics. An insightful and comparative analysis is done for the proposed quasi-ballistic model, with a hypothetical complete ballistic device and a velocity saturated short channel DG MOSFET model.