X-Band Monolithic Microwave Integrated Detector Based on MEMS Thermoelectric Power Sensor

This letter reports an X-band monolithic microwave integrated detector based on MEMS thermoelectric power sensor. It is fabricated by the GaAs monolithic microwave integrated circuit technology. The novelty of the proposed device is that it can achieve the integrated detection of the microwave signal (power, frequency, and phase) in a broad frequency bandwidth. The proposed integrated detector consists of three parts: power detection/AM demodulation; frequency detection; and phase detection, which are finally integrated on a single chip by several dual-band power dividers. In this letter, the designed dual-band power dividers have excellent impedance matching properties on X-band (8-12 GHz). The parameters to be tested are all converted into output thermal voltages by the terminated thermoelectric power sensors. Measurement results show good return loss and isolation on X-band. Power detection, AM demodulation, frequency detection, and phase detection have all been tested effectively.