CAMEM: A Computationally-Efficient and Accurate Memristive Model With Experimental Verification

When using memristive devices at the circuit level, a simple, accurate, and computationally efficient model is critically required to predict the performance of the circuit. Various memristive device models have been developed in the literature; however, most of them suffer from high complexity, low accuracy, or low computational efficiency. In this paper, a novel model for memristive devices for use at the circuit level is proposed. The proposed model is compact, sufficiently simple, computationally efficient, and compatible with popular circuit simulators. Moreover, the model meets circuit designers' requirements in terms of accuracy to explore new memristor-based design architectures. An experimental validation of the model is also provided.