Electrical characteristics and irradiation sensitivity of IGFETs with rapidly grown ultrathin gate dielectrics

Results are reported on n-channel insulated-gate field effect transistors (IGFETs) with gate insulators (50-60 AA) formed by rapid thermal processing (RTP) in O/sub 2/ and NH/sub 3/ ambients. Two types of gate dielectrics were grown: rapid thermal oxides grown in O/sub 2/ and nitroxides formed by multicycle processing in NH/sub 3/ and O/sub 2/. RTP was also used for annealing AS/sup +/-implanted source-drain junctions at 1050 degrees C for 30 s. The transistors were characterized by measuring mu /sub eff/, V/sub T/, subthreshold slope, Q/sub f/, D/sub if/, D/sub bd/, and hot-electron immunity. The observed trends are discussed. The results demonstrate excellent device characteristics, including, in particular, increased hot-electron immunity and resistance against high-energy electron irradiation.<>