Radiation resistant FET-based Temperature Sensor for End Devices of IoT

The possibility of using JFET and MOSFET as a radiation resistant temperature sensor for low power IoT sensor nodes is experimentally investigated. For this reason, the effect of gamma radiation on drain saturation current of JFET and MOSFET at two-terminal connection has been investigated. A four-FET bridge temperature sensor was obtained by connecting in the opposite diagonals of the bridge specially selected pairs of JFET and MOSFET with different sign of temperature sensitivity, but with the same in sign radiation sensitivity. It was experimentally confirmed that the temperature sensor thus obtained consumes 49 mW of power, and, under the action of ionizing radiation, maintains sensitivity in the range of 50-60 mV/°C and linearity of the output characteristic in the range from 50 °C +190 °C with deviations of not more than 6% up to a dose of 5-10⁵ R.