Improved Electrical Performance of a-Si:H TFTs for 8K Display via Phosphorus Doped in the Active Layer

High performance a-Si:H TFTs is important to realize 8K super high-vision displays. In this work, electrical performance of a-Si:H TFT was significantly improved by doping phosphorus into the lowermost active layer. Vth decreased from 1.4 V to 0.78 V and mobility increased from 0.26 to 0.44 cm² V^-1 s^-1.