Performance characterization of 1-kA/4.5-kV symmetrical emitter turn-off thyristor (ETO)

The emitter turn-off thyristor (ETO) is a hybrid power semiconductor device that turns off the gate turn-off thyristor (GTO) under the unity turn-off gain condition. This paper presents, for the first time, test results of a symmetrical ETO. The on-state voltage drops, snubberless forced turn-off losses, and load-commutated turn-off losses are characterized. The results show that the symmetrical ETO is suitable for applications that need high current and high reverse voltage blocking capability, such as a current source inverter (CSI).