Comparative Analysis for Optimising On State Current in a Dual Gate TFET

Tunnel Field Effect Transistors (TFETs) are in future expected to replace MOSFETs, owing to its better characteristics that includes lower Subthreshold swing (SS), immunity towards short channel effects, and low leakage currents etc. At the same time TFET itself faces certain challenges in relation to its performance, the major among these include the low on current of the TFETs because of the poor tunneling efficiency. This paper gives a comprehensive analysis of various techniques utilized to enhance the on-state drive current in a doped dual gate TFET (DG-TFET). Various techniques are investigated and compared using TCAD SILVACO tool in order to get the optimum performance in terms of On-state drive current and at the same time the control over ambipolar current is also established. In order to optimize the performance DC and AC parameters are also analyzed and compared.