Optical Characterization of InAlGaAs on InP for Monochromatic Photonic Power Conversion

Development of a photonic power converter for operation at 1310 nm would enable long distance optical power transfer over fiber. InAlGaAs lattice-matched to InP may be used as the absorber material in such a device. Material properties of InAlGaAs grown by molecular beam epitaxy (MBE) are studied by techniques including electro- and photoluminescence, spectroscopic ellipsometry, and quantum efficiency.