Low Loss InP Membrane Photonic Integrated Circuits Enabled by 193-nm Deep UV Lithography

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1. 3 ± 0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62 ·10³ with 4 nm FSR is measured.