ECRIS/EBIS Based Low-Energy Ion Implantation Technologies

Low-energy ion implantation technologies are of great interest for tuning the electrical, optical, mechanical, magnetic or morphological properties of solid state devices through structural modifications in advanced materials such as semiconductors, insulators, metals or polymers. The present paper describes low-energy ion implantation devices based on Electron Beam Ion Sources (EBIS) as well as Electron-Cyclotron Resonance Ion Sources (ECRIS). Both kind of ion sources allow it to produce ions of a wide variety of elements. With the available ion sources exist excellent tools to generate ion beam currents from the pA up to the mA range with ion beam energies in the range from some keV up to hundreds of keV. In the paper we give examples for EBIS- as well as ECRIS based implanter solutions and we discuss some applications as the use of high-current He⁺ irradiation in spintronics devices.