Measurement of the Lateral Charge Distribution in Silicon Generated by High-Energy Ion Incidence

The lateral distribution of the charge generated in silicon by a 15 MeV oxygen-ion incidence was experimentally measured. The lateral radius of the charge region generated because of this 15 MeV oxygen-ion incidence was 300-400 nm, which is much wider than that calculated using the well-known Katz theory. In addition, the measured peak concentration of the generated charge around the ion incident point was two orders of magnitude lower than that calculated using the Katz theory.