Evolution of Silicon-Nickel Nanosheets on (111) Silicon Substrates to Realize Reduced Graphene Oxide-Silicide Heterostructures

We report the evolution of ultra-thin silicon-nickel nanosheets on (111) silicon substrates using a hydrogen plasma processing. A novel stress-induced lateral-diffusion method has been employed to realize thin layers of Si-Ni flakes containing nickel quantum dots. The presence of carbon during the growth is critical to form carbon-silicon nanostructures and subsequently induce strain on (111) planes of silicon substrate. The lateral diffusion of Ni between (111) planes is enhanced at the presence of strain to realize silicon-nickel sheets. These sheets have been examined using TEM, AFM, SEM, EDS, XRD, Raman spectroscopy and photo-luminescence analyses. In addition, we have used graphene-oxide (GO) foils to place on the surface of these layers. By a hydrogen plasma treatment, the GO foil is reduced into rGO on silicon-nickel sheets. Finally, an rGO/Si-Ni nanosheet hetero-structures on (111) silicon substrates is formed. To have electrical contacts to the top rGO layer, we have used an indium tin oxide (ITO)-coated glass to complete the device. A preliminary light emission device has been realized and tested.