A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation

A monolithically integrated rectenna (rectifying antenna) operating at 80 GHz with a total chip area of 4 mm² is implemented using SIMMWIC (Silicon-based Monolithic Microwave Integrated Circuit) technology. By applying four embedded 6 μm² Schottky diodes under MOTT operation, a full-wave bridge rectifier circuit is efficiently integrated to a bow-tie antenna. Under RF-excitation in frequency range of 75 - 90 GHz, a receiving profile of conversion voltage around 80 GHz is clearly characterized, which is quite well consistent with the bandwidth property of the integrated bow-tie antenna. Under biasing current of 10 nA, the implemented rectenna could achieve maximal conversion voltage of 50 mV at the detecting distance of 10 cm.