Spin Resonance in a Semiconductor Structure in Quantizing Magnetic Field

The article studies the photovoltaic effect in n-InSb at optical transitions between spin subzones of Landau levels for ultra-quantum limit. The geometry is considered when the polarization is perpendicular and the current is directed along the magnetic field. The effect is due to cubic terms in Hamiltonian, existing due to the lack of inversion center. The dependence of the current on the magnetic field has a resonant character. This nature of the effect is associated with the resonance in the intermediate state and interference of the second-order transition amplitudes for relativistic contributions in Hamiltonian. The theory is compared with experiment. The aim of the work is theoretical and experimental investigation of photovoltaic effect in spin resonance. This can complement experiments on light absorption as a method of measuring zone parameters, since the same components in Hamiltonian can lead to both electro-dipole transitions and photovoltaic current.