Design of a waveguide based optoelectronic integrated circuit in silicon 0.8 micron BiCMOS technology

An optoelectronic integrated circuit was designed, simulated and realised in a standard 0.8 micron BiCMOS silicon integrated circuit fabrication process. The designed optical circuits considered of an integrated silicon light sources, an optical guiding structure, an integrated optical detector and a high gain amplifier. Simulations predict a bandwidth capability of 115 MHz for detected photo-currents in the range of 1 nA to 100 nA, driving a 10 k/spl Sigma/ load.