Design and Performance Evaluation of 1.2 kV, 325 a SiC-MOSFET High Performance Module Based 100 kVA Three-Phase Two-Level Power Block

To ramp up the adaptation of the highly optimized high current 1.2 kV Sillicon Carbide (SiC) based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) power modules, a high power three-phase two-level power block is designed which is rated at 100 kVA and operates with 800 V DC bus. The power modules combined with low inductance busbar and optimized loop thermo-syphon based heatsink extracts the full performance of the power electronic switches. In this paper, the design details of the power block is presented. Furthermore, the performance of the power block is qualified by a back-to-back pump back test set up where two power blocks are interconnected via inductors. Furthermore, closed loop voltage and current control are implemented to circulate the desired amount of AC current between the power blocks. Moreover, heat run tests are carried out to quantify the thermal performance of the thermal management system. The experimental results demonstrate the performance benefits of the power block.