Half-volt IGZO flexible thin-film transistors with E-beam deposited Al2O3 gate dielectric

Indium-gallium-zinc-oxide thin-film transistors gated with e-beam processed, thin Al₂O₃ have been fabricated on a plastic substrate. The devices show a low operating voltage (V_D) of less than 1 V, a high current on/off ratio >10³, threshold voltage V_th of 0.07V, mobility μ of 145.6 cm²V^-1s^{- 1} and a low subthreshold swing <;200 mV/decade. The effects of bending on the gate dielectric in terms of important performance parameters have been studied and it is shown that the devices maintain their high performance even when flexed to a curvature radius of 15 mm. As a result, such devices possess a great potential for low-power, flexible electronics.