Investigating the Role of Niobium Pentoxide as Transparent Conductive Oxide layer on the Efficiency of Thin Film Amorphous Silicon Solar Cell

In this paper, three different TeOs as a window layer growing on a typical a-Si:H n - i - p - p+ solar cell are separately compared. These layers are In₂O₃:Sn (ITO), Nb₂O₅, In₂O₃:W (IWO) respectively. Thickness of each layer is chosen in range of 50 to 150 nanometers. Nb₂O₅is a new idea for window layer. In comparison with the other used materials, using Nb₂O₅as a window layer in solar cell structure results higher open circuit voltage and Fill Factor therefore the efficiency is improved 2.7%.