A gm-Boosting 3–5 GHz Noise-Cancelling LNA

This paper presents a gm-boosting noise canceled ultra-wide-band (UWB) low noise amplifier (LNA) topology to optimize the noise figure (NF) and power consumption of the well-known common gate (CG) topology. The gm -boosting voltage amplifier is implemented by a common source (CS) to achieve a higher transconductance, by the same bias current, in the CG stage. The next stage includes two paths to apply the noise canceling technique and finally another CG transistor at the output to sum up the produced currents of the second stage. The designed structure is simulated at the post-layout level by TSMC 90 nm RF-CMOS technology.