Electrical Simulation of SiC/Ge Schottky Diode with Graphene Contact

Schottky diode based on Silicon Carbide (SiC) can operate at the high switching frequency and high temperature. In this study Schottky barrier diode, including semimetal contacts and SiC and Germanium (Ge) heterojunction substrate, is presented. Graphene and SiC/Ge are compared with metal (Ni) and SiC, respectively. Contacts could change the barrier height of the diode. Therefore, we illustrate the influence of semimetal (Graphene) to reduce the barrier height of the Schottky diode. The semilogarithmic 1-V curve were obtained by increasing the forward bias up to 1V in these Schottky diodes by utilizing SILVACO TCAD at room temperature. Furthermore, the four diodes of different doping concentrations are investigated to find the best concentration for Ge. According to the simulation, presented Schottky diode has higher current flow and lower turn-on voltage comparing to SiC with Ni contact.