Bipolar Resistive Switching of an Al/ZnO/Ti-based Memristor

Devices with metal-metal oxide-metal structure have been shown to present nonlinear transport properties. Here, the Al/ZnO/Ti structure is investigated for its memristive switching behavior. The I-V measurements carried out at different voltage sweeping frequencies showed drastic changes with frequency, particularly at very low frequencies (below 1 Hz). The observations point to the importance of ionic motion in the observed switching effect. The significance of oxygen vacancies in this regards is clarified. Results suggest that the oxygen deficiency is responsible for the switching mechanism. The presented model describe the observed phenomena.