Simulation of the Sample Overheat for the Four Point Semiconductor Resistivity Measurement

The results of the sample heating simulation by the measuring current when measured parameters of the semiconductor by the four-probe method are presented. The characteristics of the stationary heating mode are obtained and the introduced error is estimated. It is shown that for comparatively low-resistance samples with dimensions comparable to those of the probe, the effect of heating on the measurement error cannot be neglected. The transition process of heating in continuous and pulsed mode were investigated. The admissible heating levels for semiconductors of various conductivities are determined. The results obtained are new and useful for estimating errors in different resistivity measurement modes.