Study of the Temperature Influence on the Efficiency of Silicon Vacuum Refining under Electromagnetic Stirring

The work presents the data of numerical modeling of silicon vacuum refining at different temperatures under electromagnetic stirring for purification of large volumes of silicon (≈500 kg). Time dependencies of the concentration decrease of impurities (P, Al, Ca, Zn, Na and Cu) at different rates of electromagnetic stirring and silicon melt temperatures are obtained. The influence of the silicon melt temperature on the purification efficiency rate is established. The numerical studies are performed by COMSOL Multiphysics.