MOCVD Integration Technology of Enestor through Grafene-Like III-Nitride, Nanocarbides and InGaN/GaN QDs

The article studies integration technology aspect as for light emitting-conversion and energy storage part of enestor [1]-[3]. There have been considered non-lithographic templated InGaN/GaN QDs as its light emitting-conversion elements. We also discuss integration possibility of its energy storage part in a single process of MOCVD reactor as for sapphire nano-templates. It has been observed, that, on the nano-templated sapphire surface, a dense transparent film of anomalous surface resistance an order of magnitude lower compared to the original one may be formed. It was supposed to happen through clustering of the nanocarbides and consolidated phases of AlCN (or BCN) in the stream of trimethylaluminum (or triethylboron), respectively. It has been considered suitability of such sapphire nano-templates for super capacitor through formation of h-BN in which graphene can be encapsulated.