High Performance Low Leakage Pocket SixGe1-x Junction-Less Single-Gate Tunnel FET for 10 nm Technology

This paper presents a low leakage pocket Si_x-Ge_1-x, junction-less tunnel FET suitable under low voltage region. Junction-less single-gate TFET expolits the steep subthreshold characteristics of tunnel FET as well as the high on current due to junction-less behaviour. Pocket region(5nm) of narrow band gap material Si_x-Ge_1-x, decreases tunneling distance and improves the Ion/Ioff ratio. The proposed pocket Junction-less TFET has been designed on 2D/3D Visual TCAD device simulator for 10nm technology to optimize subthreshold parameters such as subthreshold slope, drain induced barrier lowering and leakage current. Such low leakage, low power pocket Junction-less SGTFET is suitable for analog and digital applications.