Performance Assessment of a Double Gate Work Function Engineered Doped Tunnel FET Based on 2D Surface Potential Model

Two dimensional surface potential model of a work function engineered (WFE) doped double gate (DG) Tunnel Field Effect Transistor (TFET) structure is proposed and verified using TCAD Sentaurus device simulation. The overall electric field is estimated using the proposed model based on which device performance is analyzed. The proposed model is completely physics based and analytic and does not include any fitting parameters or iterative calculation. The proposed TFET structure employs gate which is made of two metals having different thicknesses and work functions acting as tunneling gate and control gate. Such configuration creates a n+ pocket enhancing carrier tunneling probability near source/channel junction. A comparative performance analysis is also performed between our proposed device and its normal double Gate (DG) counterpart.