Modeling Short Channel Behavior of Proposed Work Function Engineered High-k Gate Stack DG MOSFET with Vertical Gaussian Doping

In this paper, 2D surface potential and threshold voltage model considering Poisson's equation and strong inversion criterion at surface potential minima is derived for our proposed work function engineered (WFE) high-k gate stack double gate (DG) MOSFET with vertical Gaussian doping. The device characteristics are explored in terms of surface potential, electric field, threshold voltage performance and DIBL effect along with comparative study with its normal DG MOSFET counterpart to investigate the upgraded immunity of the device to undesirable short channel effects. Results of analytical model are compared with ATLAS simulation data to validate our present derived model.