A Hybrid Atomistic - Semi-Analytical Modeling on Schottky Barrier Au-MoS2-Au MOSFETs

In this work, we investigate the layer dependency of Mos2 channel material based Double Gate Schottky barrier MOSFET. In order to evaluate the transport properties due to this effect accurately, we have calculated the electronic properties of multilayer Mos2 using density functional theory and incorporated those parameters in our analytical model for double Gate Schottky barrier MOSFET. A full description of the electron transport due to tunneling through the Schottky barrier and thermionic emission of electrons is computed in our model. Our results demonstrate that monolayer Mos2 shows good device characteristics for logic applications, with ON/OFF ratio ~10⁷. As far as the layer dependency is concerned, more than two times higher drain current is achievable for the device made of the monolayer based channel than that of the five-layer based channel of Mos2. In Mos2, drive current, transconductance significantly reduced with increasing number of layer. The results obtained with our model concur with experimental reports.