New fast short circuit detection method for SiC and GaN HEMT power semiconductors

Different short circuit detection and protection methods for Insulated Gate Bipolar Transistor (IGBT) have been established over the last years. Also new methods for wide bandgap power semiconductors were introduced. Short circuit detection schemes using the power loop stray inductance or an additional shunt are disadvantageous, since a low commutation loop inductance is desired to limit the overvoltage during fast switching events. In this paper a new fast short circuit detection method based on a desaturation detection circuit is presented. The new method is evaluated using LTSpice. Furthermore an evaluation board for experimental verification was developed.