A novel application kit design accelerating the performance of Danfoss' 1.2 kV SiC DCM???1000X for EV drivetrains

Commutation loop stray inductances and layout asymmetries cause multiple complications in high speed switching devices and should be minimized during the design stage to avoid subsequent power module de-rating. Such complications can include large voltage overshoot, ringing with semiconductor parasitic capacitance and current sharing mismatch, to name a few. This paper considers the design, simulation and experimental validation of a fully integrated DC-link capacitor and busbar "application kit" exclusively designed to enhance the performance of Danfoss' direct cooled molded DCM(TM)1000X platform, utilizing the latest generation of 1200 V SiC MOSFET with a current rating ranging from 200 A up to 800 A. Electromagnetic simulation using Ansys Q3D Extractor has been carried out to extract and evaluate the total commutation inductance and current density distribution on a classic 2-level inverter structure. Dynamic switching and full frequency test have been performed to validate the overall design.