Bidirectional Switch Based on Silicon High Voltage Superjunction MOSFETs and TVS Diode Used in Low Voltage DC SSCB

This paper reports on a bidirectional switch based on 600 V, 10 mOmega silicon superjunction MOSFETs and a transient-voltage-suppression (TVS) diode to be used in a solid-state circuit breaker (SSCB) application. The SSCB has a rating of 45 A, 380 VDC / 230 VAC and is designed to have an on-state power dissipation per pole comparable to a standard electromechanical breaker. Due to the achieved very low power loss, no active cooling is required. In addition, the SSCB provides a wide range of overcurrent tripping curve options. An experimental setup is developed to characterize switching operations under fault, nominal, and repetitive highly inductive nominal currents. Additionally, time-current tripping characteristics of the switch are investigated by means of thermal simulations.