New 950-V IGBT and diode technology integrated in a low-inductive ANPC topology for solar applications

This paper presents the new 950-V IGBT and diode technology. The IGBT structure is based on a micro-pattern trench cell concept that provides strongly reduced static losses and/or significantly lowered switching losses compared to typical 1200-V technologies. By analyzing the interaction of application requirements and power-module design, consequences for application and optimization paths for power modules are derived. Optimized power-module design and usage of 950-V technology enable the implementation of a fully integrated 1500-V ANPC topology with a nominal current of 400 A and a low stray inductance of only 15 nH in the recently released baseplate-less Easy3B package.