Pressure dependence of electron tunneling transmission in GaAs/AlAs multiple barrier heterostructures

We propose a set of boundary conditions for electron enveloping wave functions at GaAs/AlAs [100] heterointerfaces, taking into account not only /spl Gamma/-/spl chi/ mixing, but also interaction /spl chi/1-/spl chi/3 of bands of AlAs in effective masses approach. The proposed conditions have allowed dependences of the mixing effect upon the parity of monolayer number in AlAs barriers to be obtained and applied stress. The calculations have shown, that the pressure results in a significant displacement of /spl chi/-resonances and increase of splitting magnitude of twin /spl chi/-peaks which is caused by interaction with /spl Gamma/-peak. The movement of a /spl Gamma/1 resonance is stipulated by dependence of effective masses of /spl Gamma/-valley on strain.