175V, > 5.4 MV/cm, $50\ \mathrm{m}\Omega.\text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction

A diamond MOSFET has been fabricated and characterized up to 250°C. The fabrication process has been improved in order to significantly reduce the specific on resistance, down to 50 mΩ.cm², and the gate leakage current at high temperature. The maximum electrical field in diamond, at the breakdown value of 175V, is estimated to be higher than 5.4 MV/cm, with a boron doping of 2×10¹⁷ cm^-3.