Design Considerations for High Voltage SiC Power Devices: An Experimental Investigation into Channel Pinching of 10kV SiC Junction Barrier Schottky (JBS) Diodes

This paper reports on the design, fabrication and electrical characteristics of 10kV 4H-SiC JBS diodes. Both Ni and Ti JBS diodes were fabricated on $7\times 10^{14}\ \mathbf{cm}^{-3}$ doped, $95\boldsymbol{\mu} \mathbf{m}$-thick n-type epi on 6-inch 4H-SiC n+ substrates. SEM imaging and SIMS profiling were conducted to investigate the unexpected high knee voltages from Ti JBS diodes. The “extensive” straggle by implanted ions was discovered from this investigation, which was attributed from the low background doping concentration in the drift layer.