Batch Atomic Layer Deposition of Aluminum Nitride for RF-MEMS and GAN Power-Devices

We report for the first-time batch process of atomic layer deposition (ALD) for aluminum nitride (AlN). Ammonia (NH3) was used as the nitrogen source, while trimethylaluminum (TMA) or aluminum chloride (AlCl3) were the metal precursors for the AlN films deposited at 325–475 °C and 525 °C, respectively. The AlN films deposited in batch process had good thickness uniformity and low impurity levels, while the crystalline structure was dependent on the precursor, i.e. TMA or AlCl3.