High Performance W/n-Si Schottky Diode using Black Phosphorus as an Interlayer

The novel application of mechanically exfoliated Black Phosphorus (BP) as an interlayer is explored for the first time in W/n-Si Schottky barrier diode (SBD). The SBD performance was significantly enhanced with an increase in Schottky barrier height from ∼.48 eV to ∼0.59 eV, improvement in ideality factor from ∼2 to ∼1 and increase in ON/OFF ratio from ∼10² to ∼10⁵ with BP interlayer at room temperature. The performance enhancement was found to be across a wide temperature range from 298K to 398K.