Ultra-high voltage 4H-SiC Thyristor with inhomogeneous carrier lifetime

Ultra-high voltage 4H-SiC thyristor with inhomogeneous carrier lifetime has been investigated by two-dimensional numerical simulation. The effects of inhomogeneous minority carrier lifetime in narrow n-base, wide blocking p-base and both on the forward characteristics of 4H-SiC thyristor are simulated. Results indicate that, compared to the 4H-SiC thyristor with homogeneous carrier lifetime, the forward breakdown voltage in 4H-SiC thyristor with inhomogeneous carrier lifetime has changed little, however, its forward voltage drop has distinctly increased by 32% appoximately.