A NiOx based threshold switching selector for RRAM crossbar array application

Resistive random access memory is one of the promising candidates for next generation nonvolatile memory, and the crossbar structure is highly appreciated in high density integration in which selector devices are the key factor to suppress the cross-talk issue. In this paper, a threshold switching device based on Cu/NiO/Al sandwich structure is reported. Stable threshold switching has been demonstrated with low operation voltage $(\lt \pm 1V)$ and self-compliance, the current in HRS is as low as several nA. The achievement of this TS device provides a potential candidate as a selector device for high density crossbar array RRAM integration application.