External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

We demonstrated a monolayer MoTe
2
based near-IR light emitting diode on SiO
2
/Si substrate and determined for the first time the external quantum efficiency of the device in the range of
$10^{-4}\sim 5\times 10^{-3}$
at
$5\sim 300\mathrm{K}$
© 2019 The Author(s)