Application of the power contributors method for the AOI22 CMOS cell

The prediction of the static power consumption and the leakage currents, flowing in CMOS cells, is a very important task. This task has to be completed early in the design cycle. Moreover, it is time consuming, because it must be repeated for all cells that comprise a design library and also for all input combinations of them. However, the Power Contributors Method has been proposed in order to facilitate this procedure. Any cell into a datum input state can be decomposed into elementary structures, called Power Contributors where the leakage currents that flow in them are modeled. Thereafter, these structures are combined in order to provide accurate expressions for the leakage currents and static power consumption of the initial cells. The derived models are functions of temperature, supply voltage and transistor width. This method has been applied into an AOI22 cell from NanGate Open Cell library, giving very promising results, since the mean relative error never exceeds 1%.