Gate Drive Design for a Hybrid Si IGBT/SiC MOSFET Module

In this paper, the hybrid switch (HyS) consisting of the paralleled Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is packaged into a compact phase-leg module. A novel index is proposed to select the optimal switching pattern to minimize the power loss of the HyS and guarantee the reliability. Gate drive is designed and the details of the layout and installation of the gate drive board are introduced. Based on the HyS module, a 3.3kW/50 kHz wireless power transmission system is set up.